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PD - _____
PRELIMINARY
IRLP3803
VDSS = 30V RDS(on) = 0.006 ID = 120A
HEXFET(R) Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
120 83 470 150 1.0 20 610 71 15 1.8 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.24 ----
Max.
1.0 ---- 40
Units
C/W
8/4/95
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IRLP3803
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 30 --- --- --- 1.0 55 --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.006 VGS = 10V, ID = 71A 0.011 VGS = 4.5V, ID = 59A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 71A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- ID = 71A ns --- RG = 1.3, VGS = 4.5V --- RD = 0.20, See Fig. 10 Between lead, --- 5.0 --- 6mm (0.25in.) nH from package --- 13 --- and center of die contact --- 5000 --- VGS = 0V --- 1800 --- pF VDS = 25V --- 880 --- = 1.0MHz, See Fig. 5
Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- --- 14 230 29 35
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- 120 A --- --- 120 450 470 1.3 180 680 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 71A, VGS = 0V TJ = 25C, IF = 71A di/dt = 100A/s
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting T J = 25C, L = 180H RG = 25, IAS = 71A. (See Figure 12) ISD 71A, di/dt 130A/s, V DD V(BR)DSS, TJ 175C
Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
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IRLP3803
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
10000
ID , Drain-to-Source Current (A)
1000
ID , Drain-to-Source Current (A)
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
100
100
10
10
1
1
2.0V
0.1
0.1
2.0V
0.01 0.1
20s PULSE WIDTH T J = 25C
10
A
1
100
0.01 0.1
20s PULSE WIDTH T J = 175C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 175oC
1000
2.0
I D , Drain-to-Source Current (A)
TJ = 25C
100
TJ = 175C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 120A
1.5
10
1.0
1
0.5
0.1
0.01 2.0 3.0 4.0 5.0
V DS = 25V 20s PULSE WIDTH
6.0 7.0 8.0 9.0
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLP3803
10000
8000
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C =C Ciss C rss = C gd + C oss ds gd
15
I D = 71A V DS = 24V V DS = 15V
12
C, Capacitance (pF)
6000
Coss
9
4000
6
Crss
2000
3
0 1 10 100
A
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160
A
200
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10s
100
TJ = 175C
ID , Drain Current (A)
100
100s
TJ = 25C
1ms
10 0.4 0.8 1.2 1.6 2.0 2.4
VGS = 0V
2.8
A
10 1
TC = 25C TJ = 175C Single Pulse
10
10ms
A
100
3.2
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLP3803
VDS
120
RD
LIMITED BY PACKAGE
100
VGS RG
D.U.T. VDD
ID, Drain Current (Amps)
80
5.0V
Pulse Width 1 s Duty Factor 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
20
0 25 50 75 100 125 150
A
175
TC , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
A
0.0001 0.001 0.01 0.1 1 10
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLP3803
1500
EAS , Single Pulse Avalanche Energy (mJ)
TOP
1200
ID 29A 50A BOTTOM 71A
5.0 V
900
Fig 12a. Unclamped Inductive Test Circuit
600
300
0
VDD = 15V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms
5.0 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRLP3803
Peak Diode Recovery dv/dt Test Circuit
D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
RG
* * * *
dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRLP3803
Package Outline
TO-247AC Outline Dimensions are shown in millimeters (inches)
3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
-D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
15.90 (.626) 15.30 (.602) -B-
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRFPE30 3A1Q 9302 DATE CODE (YYWW) YY = YEAR WW WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice.
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